unisonic technologies co., ltd utt6n10z power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r502-921, a 100v, 6 a n-channel power mosfet ? description the utc utt6n10z is an n-channel enhancement mode power fet, it uses utc?s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. the utc utt6n10z is usually used in dc-dc conversion. ? features * r ds(on) =80m ? @v gs = 10 v,i d =6a * high switching speed * low crss (typically 3.1pf) * low gate charge(typically 4.3nc) ? symbol 1.gate 3.source 2.drain sot-223 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTT6N10ZL-AA3-R utt6n10zg-aa3-r sot-223 g d s tape reel note: pin assignment: g: gate d: drain s: source
utt6n10z power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-921, a ? absolute maximum ratings (t c =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 100 v gate-source voltage v gss 20 v drain current continuous i d 6 a pulsed i dm 24 a single pulsed avalanche energy (note 3) e as 12 mj power dissipation t a =25c (note 1) p d 2.2 w junction temperature t j 150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient (note 1) ja 55 c/w junction to case jc 12 c/w ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 100 v drain-source leakage current i dss v ds =80v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +10 a reverse v gs =-20v, v ds =0v -10 a on characteristics (note 2) gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1.0 2.2 v static drain-source on-state resistance r ds(on) v gs =10v, i d =6a 80 108 m ? v gs =4.5v, i d =3a 100 153 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 234 315 pf output capacitance c oss 46 65 pf reverse transfer capacitance c rss 3.1 5 pf switching parameters total gate charge q g v gs =10v, v dd =25v, i d =6a 4.3 7 nc gate to source charge q gs v dd =50v, i d =6a 0.7 nc gate to drain charge q gd v dd =50v, i d =6a 0.9 nc turn-on delay time t d ( on ) v dd =50v, i d =6a, v gs =10v, r gen =6 ? 3.8 10 ns rise time t r 1.3 10 ns turn-off delay time t d ( off ) 10 20 ns fall-time t f 1.5 10 ns source- drain diode ratings and characteristics ssdrain-source diode forward voltage v sd i s =6a, v gs =0v (note 2) 0.86 1.3 v maximum body-diode continuous current i s 6 a source current pulsed i sm 24 a notes: 1. ja is the sum of the junction-to-ca se and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. jc is guaranteed by design while ja is determined by the user?s board deign. 2. pulse test: pulse width 300s, duty cycle 2% 3. starting t j = 25c, l =11mh, i as =6a, v dd = 90v, v gs =10v.
utt6n10z power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-921, a ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 0.4 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 1.2 1.6 2.4 0.8 2.0 0 50 100 150 200 250 300 0 25 75 100 125 50 0 50 100 150 200 250 300 drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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